static induction
英 [ˈstætɪk ɪnˈdʌkʃn]
美 [ˈstætɪk ɪnˈdʌkʃn]
网络 静电感应
双语例句
- First, the factors that influence the blocking voltage BVAK of power static induction thyristor ( power SITH) are discussed and some new anode structures are proposed to improve it.
分析了影响电力静电感应晶闸管阻断电压BVAK的因素，提出了提高BVAK的方法，并构造了几种阳极结构。 - Methods for improving the high current performance of static induction transistor ( SIT) are presented.
描述了改善静电感应晶体管（SIT）大电流特性的新方法。 - The Manufacture and Research on the Operational Properties of Organic Static Induction Transistor
有机静电感应晶体管的制作及特性研究 - SIT-BJT model is proposed for static induction thyristors ( SITh) operation in the blocking state.
提出了一种描述静电感应晶闸管在阻断态时的工作机理的SIT-BJT等效模型。 - The reverse snapback phenomena ( RSP) on I-V characteristics of static induction thyristors ( SITH) are physically researched.
研究了静电感应晶闸管的反向转折特性。 - First, according to the actual organic static induction transistor establishing the physical model and selecting appropriate structure parameters, solves poisson's equation by adopting finite element method.
首先根据实际制作的有机静电感应三极管建立物理模型，选取合适的结构参数，采用有限元法求解泊松方程。 - The gate source breakdown performance of static induction transistor was studied experimentally.
对静电感应器件的栅源击穿特性做了实验研究。 - The Control on High Frequency Power Parameter of the Static Induction Transistor
静电感应晶体管高频功率参数的控制 - A cylindrical gates model of the static induction transistor is proposed and mirror method is used to calculate the distribution of electric potential.
针对埋栅型静电感应晶体管（SIT）提出一种柱栅模型.用镜像法计算了器件内电势分布，并在此基础上计算了沟道势垒、栅效率、电压放大因子等。 - Gate Source Breakdown Performance and Its Improvement for Static Induction Devices
静电感应器件栅源击穿特性的改善 - Static Induction Transistor Up Converter with High Linearity and Large Output
高线性大输出的静电感应晶体管上变频器 - Analytical Model of the Blocking State of Surface Gate Static Induction Transistor
平面栅静电感应晶体管阻断状态解析模型 - Study on the Manufacture Technology of Power Static Induction Devices
大功率静电感应器件制造技术的研究 - This paper describes a high-frequency and high-power induction heating inverter by using Static induction Transistor ( SIT), and proposes the technique of choosing and controlling of SIT.
本文简述了静电感应晶体管（SIT）大功率感应加热电源的研究成果。着重介绍了SIT的参数选择及控制方法。 - The static induction devices with complex structure
复合结构的静电感应器件 - The paper describes a silent voltage source PWM frequency converter. Its main circuit uses novel full controlled devices bipolar static induction transistor ( BSIT) and static induction thyristor ( SITH).
介绍一种电压型PWM静音式变频器，其主电路选用新型全控型器件&双极型静电感应晶体管（BSIT）和静电感应晶闸管（SITH）。 - The relation ship between operation characteristics and structure of a schottky type gate electrode organic static induction transistor with Au/ CuPc/ Al/ CuPc/ Au sandwich structure is analyzed.
根据Au/CuPc/Al/CuPc/Au三明治结构的肖特基型栅极有机静电感应三极管的测试结果，分析了该三极管动作特性与器件结构的关系。 - Analysis of the Influence of Changing Gate Length on the Operation Characteristic of Organic Static Induction Transistor
栅极长度变化对有机静电感应晶体管工作特性影响解析 - Discussion on the Parameter Design of 100A/ 1200V Static Induction Thyristor
100A/1200V静电感应晶闸管参数设计的探讨 - The main work of this thesis analyzes the organic static induction transistor's operational mechanism, and researchs the change of gate length, change of gate-drain distance and change of electric channel breadth for operational characteristics influence of organic static induction transistor.
本论文的主要工作是解析有机静电感应三极管的工作机理，并研究了栅极长度变化、栅漏极间距变化和导电沟道的宽度变化对有机静电感应三极管工作特性的影响。 - Pioneering Study on Static Induction Devices ( SID) in Past 20 Years
20年来对静电感应器件（SID）的开拓性研究 - In addition, we designed the new device structure, the new layout and the new flow of the Static Induction Transistor ( SIT).
此外，对静电感应晶体管（SIT）的结构设计、版图设计和工艺流程设计也进行了深入的研究。 - According to the test results of an organic static induction transistor by organic semiconductive copper-phthalocyanine, numerical simulation is conducted to analyze and evaluate its operation mechanism and electrical property with an electric circuit model.
根据采用有机半导体材料酞菁铜制作的有机静电感应三极管的测试结果，使用适当电路模型和数学工具，进行数值仿真解析，对其动作机理和电气特性进行了解析和评价。 - In order to manufacture power Static Induction Devices ( SIDs) with excellent characteristic to meet the need of National economy, the key manufacture technologies of Static Induction Thyristor ( SITH) was studied based on the analysis of its operational principle.
为了制造出特性优良的大功率静电感应器件（SID）满足国民经济发展的需要，在对静电感应器件理论分析的基础上，对其关键制造技术进行了深入的研究。 - The relationship between the main electric parameters and the structure of the static induction thyristor devices has been discussed. Moreover, 100 A/ 1 200 V device has been designed and the results are reported here.
分析了电力静电感应晶闸管的主要电参数与器件结构的关系，结合制管经验进行了100A／1200V器件的结构（版图）设计、工艺设计，给出了有关结果。 - Manufactural Controlling and Parameter Adjustment on Static Induction Thyristor
静电感应晶闸管的工艺控制和参数调节 - Using ion implantation doping on the gate and the source region in order to get a better grid-controlled performance, combined with the process experiment, the process parameters were determined. A comprehensive test on electrical parameters for low-power static induction transistor was conducted.
采用离子注入技术对栅区和源区进行掺杂，以获得良好的栅控性能，结合工艺实验，确定了各环节工艺参数。 - Static induction transistor ( SIT) is a new type of power device.
静电感应晶体管（SIT）是一类新型功率器件。 - Compared with the traditional static induction system on a simple physical meaning or time static shortest path, dynamic path optimization has important theoretical and engineering application value.
相比于传统静态诱导系统中简单的物理意义上的路径最短或静态时间最短，具有重要的理论意义和工程应用价值。 - According to static induction and the performance of electret film in storing electrical charge, the program of power generator based on micro-scale vibration by using electret film was proposed.
依据静电感应原理和薄膜驻极体储存电荷的性能，提出了基于驻极体的微振动式静电发电器件的研究方案。